1
ELECTRICAL CHARACTERISTICS OF Au/n-Si STRUCTURE WITH AND WITHOUT Bi3Ti4O12 INTERFACIAL LAYER, 8. INTERNATIONAL GÖBEKLİTEPE SCIENTIFIC STUDIES CONGRESS, 02.03.2024
Dr. Öğr. Üyesi Seda Bengi |
2
Analysis of the electrical characteristics of Al/ GaN/ p-GaAs Structure at high temperatures, 9th International Conference on Materials Science and Nanotechnology for Next Generation, 22.09.2022
Dr. Öğr. Üyesi Seda Bengi, Doç. Dr. Sedat Zeyrek |
3
On the Negative Capacitance Behaviour at Low Frequencies in Au/ITO-PVP/ n-Si Structures, 8th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG-2021), 14.06.2021
Dr. Öğr. Üyesi Seda Bengi |
4
The effect of illumination on the electrical characterization of Al/HfO2/p-Si MOS device, 5th International Conference on Materials Science and Nanotechnology for Next Generation, 04.10.2018
Esra Yükseltürk, Dr. Öğr. Üyesi Seda Bengi, Mehmet Mahir Bülbül |
5
Capacitance - voltage and Conductance - voltage Characteristics of Au/ C20H12/n-Si Structure at high temperatures, 2nd International Conference on Innovations in Natural Science and Engineering, 07.09.2018
Dr. Öğr. Üyesi Seda Bengi, Esra Yükseltürk, Mehmet Mahir Bülbül |
6
Electrical characteristics of Au/n-Si structure with perylene interfacial layer at room temperature, 5th International Conference on Materials Science and Nanotechnology for Next Generation, 04.06.2018
Dr. Öğr. Üyesi Seda Bengi, Mehmet Mahir Bülbül |
7
The profile of frequency dependent interface states (Nss) and series resistance (Rs) in Au/C20H12/n-Si (MPS) Schottky diodes, 4th International Conference on Materials Science and Nanotechnology for Next Generation, 28.06.2017
Dr. Öğr. Üyesi Seda Bengi |
GENEL FİZİK I |
TEMEL ELEKTRİK VE ELEKTRONİK |
ALTERNATİF AKIM DEVRE ANALİZİ |
GENEL FİZİK II |
FİZİK |