Doç. Dr. Seda Bengi Özgeçmiş Sayfası

Doç. Dr. Seda Bengi

Biyomedikal Cihaz Teknolojisi Programı
sbengi[at]baskent.edu.tr
0312 246 66 66 4034

Doktora, (2014), Gazi Üniversitesi, Fizik

Yüksek Lisans, (2009), Gazi Üniversitesi, Fizik

Lisans, (2005), Gazi Üniversitesi, Fizik

H-İndeks 8

• Yoğun Madde Fiziği

Yayın Bilgileri


1 Measurement of high temperature sensitivity of Al/(Zn:Cd:Ni:TiO2)/p-Si structure based on capacitance/ conductance-voltage (C/G-V), PHYSICA SCRIPTA, 100(0), 2025 Doç. Dr. Seda Bengi, Doç. Dr. Seçkin Altındal Yerişkin, Arezou Khalkhali, Doç. Dr. Ayşegül Dere, Kevser Yıldız, Prof. Dr. Fahrettin Yakuphanoğlu
2 The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures, PHYSICA SCRIPTA, 99(2), 2024 Prof. Dr. Hayriye Gökçen Çetinkaya, Doç. Dr. Seda Bengi, Doç.Dr. Ömer Sevgili, Prof. Dr. Şemsettin Altındal
3 Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities, JOURNAL OF ELECTRONIC MATERIALS, 53(0), 2024 Doç. Dr. Seda Bengi, Prof.Dr. H. Gökçen Çetinkaya, Prof. Dr. Şemsettin Altındal, Doç.Dr. Sedat Zeyrek
4 The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures, Silicon, 16(0), 2024 Prof. Dr. Hayriye Gökçen Çetinkaya, Doç. Dr. Seda Bengi, Prof. Dr. Perihan Durmuş, Selçuk Demirezen, Prof. Dr. Şemsettin Altındal
5 Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p?Si structure with %0.5 Bi:ZnO interfacial layer, IONICS, 30(0), 2024 Doç. Dr. Seda Bengi, Prof.Dr. Hayriye Gökçen Çetinkaya, Prof. Dr. Şemsettin Altındal, Prof.Dr. Perihan Durmuş
6 The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD), PHYSICA SCRIPTA, 98(0), 2023 Doç. Dr. Seda Bengi
7 Determining the dielectric characteristics of the Au/C20H12/n-Si (MPS) structure over a wide temperature and voltage, INDIAN JOURNAL OF PHYSICS, 98(0), 2023 Doç. Dr. Seda Bengi, Prof.Dr. Şemsettin Altındal, Doç.Dr. Sedat Zeyrek
8 Electrical Properties and Conduction Mechanism of Au/C20H12/n-Si Structure at High Temperatures Utilizing Impedance Measurements, JOURNAL OF ELECTRONIC MATERIALS, 52(0), 2023 Doç. Dr. Seda Bengi
9 Investigation of electrical characterization of Al/HfO2/p- Si structures in wide temperature range, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 34(0), 2023 Doç. Dr. Seda Bengi, Dr. Öğr. Üyesi Esra Yükseltürk, Prof. Dr. Mehmet Mahir Bülbül
10 The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD), JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 34(0), 2023 Dr. Öğr. Üyesi Esra Yükseltürk, Doç. Dr. Seda Bengi
11 Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 28(5), 2017 Doç. Dr. Seda Bengi, Kani Moraki, Do. Dr. Sedat Zeyrek, Prof. Dr. M. Mahir Bülbül, Prof. Dr. Şemsettin Altındal
12 Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 16(3), 2014 Doç. Dr. Seda Bengi, Prof. Dr. M. Mahir Bülbül
13 Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures, CURRENT APPLIED PHYSICS, 13(8), 2013 Doç. Dr. Seda Bengi, Prof. Dr. M. Mahir Bülbül
14 Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier, MICROELECTRONIC ENGINEERING, 93(0), 2012 Doç. Dr. Seda Bengi, İ. Affendiyeva, Prof. Dr. M. Mahir Bülbül, Prof. Dr. Şemsettin Altındal
15 Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes, JOURNAL OF APPLIED PHYSICS, 108(3), 2010 Doç. Dr. Seda Bengi, Prof. Dr. M.Mahir Bülbül, Prof. Dr. İlbilge Dökme, Prof. Dr. Tuncay Tunç, Prof. Dr. Şemsettin Altındal


1 ELECTRICAL CHARACTERISTICS OF Au/n-Si STRUCTURE WITH AND WITHOUT Bi3Ti4O12 INTERFACIAL LAYER, 8. INTERNATIONAL GÖBEKLİTEPE SCIENTIFIC STUDIES CONGRESS, 02.03.2024 Doç. Dr. Seda Bengi
2 Analysis of the electrical characteristics of Al/ GaN/ p-GaAs Structure at high temperatures, 9th International Conference on Materials Science and Nanotechnology for Next Generation, 22.09.2022 Doç. Dr. Seda Bengi, Doç. Dr. Sedat Zeyrek
3 On the Negative Capacitance Behaviour at Low Frequencies in Au/ITO-PVP/ n-Si Structures, 8th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG-2021), 14.06.2021 Doç. Dr. Seda Bengi
4 The effect of illumination on the electrical characterization of Al/HfO2/p-Si MOS device, 5th International Conference on Materials Science and Nanotechnology for Next Generation, 04.10.2018 Esra Yükseltürk, Doç. Dr. Seda Bengi, Mehmet Mahir Bülbül
5 Capacitance - voltage and Conductance - voltage Characteristics of Au/ C20H12/n-Si Structure at high temperatures, 2nd International Conference on Innovations in Natural Science and Engineering, 07.09.2018 Doç. Dr. Seda Bengi, Esra Yükseltürk, Mehmet Mahir Bülbül
6 Electrical characteristics of Au/n-Si structure with perylene interfacial layer at room temperature, 5th International Conference on Materials Science and Nanotechnology for Next Generation, 04.06.2018 Doç. Dr. Seda Bengi, Mehmet Mahir Bülbül
7 The profile of frequency dependent interface states (Nss) and series resistance (Rs) in Au/C20H12/n-Si (MPS) Schottky diodes, 4th International Conference on Materials Science and Nanotechnology for Next Generation, 28.06.2017 Doç. Dr. Seda Bengi


1 Journal of Materials Science: Materials in Electronics, Hakem, 2025
2 Journal of Materials Science: Materials in Electronics, Hakem, 2025


GENEL FİZİK I
TEMEL ELEKTRİK VE ELEKTRONİK
ALTERNATİF AKIM DEVRE ANALİZİ
GENEL FİZİK II


ISARC Bilim ve Danışma Kurulu Üyeliği Üyelik
ISARC Düzenleme Kurulu Üyeliği Üyelik

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