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Yayın ve Akademik Faaliyet Özeti

16
Makale
207
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7
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2
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İndekslere Göre Yayın Sayıları
2 indeks
16
SCI-E
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TR Dizin
Makale Bilgileri
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Measurement of high temperature sensitivity of Al/(Zn:Cd:Ni:TiO2)/p-Si structure based on capacitance/ conductance-voltage (C/G-V), PHYSICA SCRIPTA, 100(0), 2025 SCI / SCI EXPANDED
Doç. Dr. Seda Bengi, Doç. Dr. Seçkin Altındal Yerişkin, Arezou Khalkhali, Doç. Dr. Ayşegül Dere, Kevser Yıldız
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The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures, PHYSICA SCRIPTA, 99(2), 2024 SCI / SCI EXPANDED
Prof. Dr. Hayriye Gökçen Çetinkaya, Doç. Dr. Seda Bengi, Doç.Dr. Ömer Sevgili, Prof. Dr. Şemsettin Altındal
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The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures, Silicon, 16(0), 2024 SCI / SCI EXPANDED
Prof. Dr. Hayriye Gökçen Çetinkaya, Doç. Dr. Seda Bengi, Prof. Dr. Perihan Durmuş, Selçuk Demirezen, Prof. Dr. Şemsettin Altındal
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Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 16(3), 2014 SCI / SCI EXPANDED
Doç. Dr. Seda Bengi, Prof. Dr. M. Mahir Bülbül
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Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes, JOURNAL OF APPLIED PHYSICS, 108(3), 2010 SCI / SCI EXPANDED
Doç. Dr. Seda Bengi, Prof. Dr. M.Mahir Bülbül, Prof. Dr. İlbilge Dökme, Prof. Dr. Tuncay Tunç, Prof. Dr. Şemsettin Altındal
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ELECTRICAL CHARACTERISTICS OF Au/n-Si STRUCTURE WITH AND WITHOUT Bi3Ti4O12 INTERFACIAL LAYER
8. INTERNATIONAL GÖBEKLİTEPE SCIENTIFIC STUDIES CONGRESS · 02.03.2024
Doç. Dr. Seda Bengi
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Analysis of the electrical characteristics of Al/ GaN/ p-GaAs Structure at high temperatures
9th International Conference on Materials Science and Nanotechnology for Next Generation · 22.09.2022
Doç. Dr. Seda Bengi, Doç. Dr. Sedat Zeyrek
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On the Negative Capacitance Behaviour at Low Frequencies in Au/ITO-PVP/ n-Si Structures
8th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG-2021) · 14.06.2021
Doç. Dr. Seda Bengi
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The effect of illumination on the electrical characterization of Al/HfO2/p-Si MOS device
5th International Conference on Materials Science and Nanotechnology for Next Generation · 04.10.2018
Esra Yükseltürk, Doç. Dr. Seda Bengi, Mehmet Mahir Bülbül
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Capacitance - voltage and Conductance - voltage Characteristics of Au/ C20H12/n-Si Structure at high temperatures
2nd International Conference on Innovations in Natural Science and Engineering · 07.09.2018
Doç. Dr. Seda Bengi, Esra Yükseltürk, Mehmet Mahir Bülbül
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Electrical characteristics of Au/n-Si structure with perylene interfacial layer at room temperature
5th International Conference on Materials Science and Nanotechnology for Next Generation · 04.06.2018
Doç. Dr. Seda Bengi, Mehmet Mahir Bülbül
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The profile of frequency dependent interface states (Nss) and series resistance (Rs) in Au/C20H12/n-Si (MPS) Schottky diodes
4th International Conference on Materials Science and Nanotechnology for Next Generation · 28.06.2017
Doç. Dr. Seda Bengi
1
Journal of Materials Science: Materials in Electronics
Hakem · 2025
2
Journal of Materials Science: Materials in Electronics
Hakem · 2025
1
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